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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC030N10NS5SCATMA1TRENCH >=100V Infineon Technologies |
90 | - |
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Datasheet |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 171A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.8V @ 115µA | 88 nC @ 10 V | ±20V | 6500 pF @ 50 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WSON-8-2 |
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IAUT300N08S5N014ATMA1MOSFET N-CH 80V 300A 8HSOF Infineon Technologies |
71 | - |
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Datasheet |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (DC) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187 nC @ 10 V | ±20V | 13178 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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IPP030N10N3GXKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
45 | - |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IMZ120R030M1HXKSA1SICFET N-CH 1.2KV 56A TO247-4 Infineon Technologies |
88 | - |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63 nC @ 18 V | +23V, -7V | 2120 pF @ 800 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-1 |
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IMBG120R012M2HXTMA1SIC DISCRETE Infineon Technologies |
31 | - |
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Datasheet |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 144A (Tc) | 15V, 18V | 12.2mOhm @ 56.7A, 18V | 5.1V @ 17.8mA | 124 nC @ 18 V | +23V, -10V | 4050 pF @ 800 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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AIMBG120R010M1XTMA1SIC_DISCRETE Infineon Technologies |
13 | - |
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Datasheet |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 187A | - | - | - | - | - | - | - | - | -55°C ~ 175°C | - | - | Surface Mount | PG-TO263-7-12 |
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IMW120R007M1HXKSA1SIC DISCRETE Infineon Technologies |
88 | - |
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Datasheet |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 225A (Tc) | 15V, 18V | 9.9mOhm @ 108A, 18V | 5.2V @ 47mA | 289 nC @ 18 V | +20V, -5V | 9170 pF @ 800 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPD031N03LGATMA1MOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
822 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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BSP135IXTSA1MOSFET N-CH 600V 120MA SOT223-4 Infineon Technologies |
1,023 | - |
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Datasheet |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 600 V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 3.7 nC @ 5 V | ±20V | 98 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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ISP12DP06NMXTSA1MOSFET P-CH 60V 2.8A SOT223-4 Infineon Technologies |
1,060 | - |
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Datasheet |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.8A (Ta) | 10V | 125mOhm @ 2.8A, 10V | 4V @ 520µA | 20.2 nC @ 10 V | ±20V | 790 pF @ 30 V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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