Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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VS-3C08ET07S2L-M3650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division |
2,373 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 650 V | 340pF @ 1V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-90APS16L-M3DIODE GEN PURP 1.6KV 90A TO247AD Vishay General Semiconductor - Diodes Division |
492 |
|
![]() Datasheet |
- | TO-247-3 | Tube | Active | Standard | 1600 V | 90A | 1.21 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-3C16ET07T-M3650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division |
3,020 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 85 µA @ 650 V | 700pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-EPH3006-N3DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
422 |
|
![]() Datasheet |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.65 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 26 ns | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
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VS-APU3006-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
440 |
|
![]() Datasheet |
FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC | -65°C ~ 175°C |
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VS-E5PX7512L-N3DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division |
500 |
|
![]() Datasheet |
FRED Pt® Gen 5 | TO-247-2 | Tube | Active | Standard | 1200 V | 75A | 3.3 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-3C10ET07S2L-M3650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division |
2,345 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 445pF @ 1V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-40EPF06-M3DIODE GP 600V 40A TO247AC Vishay General Semiconductor - Diodes Division |
478 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 600 V | 40A | 1.25 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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VS-3C12ET07S2L-M3650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division |
1,557 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 65 µA @ 650 V | 535pF @ 1V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-1N1184RADIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
170 |
|
![]() Datasheet |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 40A | 1.3 V @ 126 A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5 mA @ 100 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 200°C |